AIP congratulates Isamu Akasaki, Hiroshi Amano, and Shuji Nakamura on their receipt of the Nobel Prize in Physics "for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources."
On this page, you will find:
» Seminal papers from AIP Publishing (free access through 12/31/14)
» Review article (free access through 12/31/14)
» Articles from Inside Science News Service
» More than 120 related articles and conference proceedings from AIP Publishing (free access through 12/31/14)
» Top 10 most cited articles related to the GaN devices
» Articles from AVS Science & Technology of Materials, Interfaces, and Processing
» From OSA Publishing—more than 20 related articles and conference proceedings (free access for 60 days)
2014 Physics Nobel Prize Resources →
Seminal papers from AIP Publishing (free access through 12/31/14)
Novel metalorganic chemical vapor deposition system for GaN growth
Shuji Nakamura, Yasuhiro Harada and Masayuki Seno
Appl. Phys. Lett. 58 , 2021 (1991)
High‐power InGaN/GaN double‐heterostructure violet light emitting diodes
Shuji Nakamura, Masayuki Senoh and Takashi Mukai
Appl. Phys. Lett. 62 , 2390 (1993)
In x Ga(1−x)N/In y Ga(1−y)N superlattices grown on GaN films
Shuji Nakamura, Takashi Mukai, Masayuki Senoh, Shin‐ichi Nagahama and Naruhito Iwasa
J. Appl. Phys. 74 , 3911 (1993)
Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
Shuji Nakamura, Takashi Mukai and Masayuki Senoh
Appl. Phys. Lett. 64 , 1687 (1994)
High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes
Shuji Nakamura, Takashi Mukai and Masayuki Senoh
J. Appl. Phys. 76 , 8189 (1994)
InGaN/AlGaN blue‐light‐emitting diodes
Shuji Nakamura
J. Vac. Sci. Technol. A 13 , 705 (1995) — A publication of AVS Science & Technology of Materials, Interfaces, and Processing
75 Å GaN channel modulation doped field effect transistors
Jinwook Burm, William J. Schaff, Lester F. Eastman, Hiroshi Amano and Isamu Akasaki
Appl. Phys. Lett. 68 , 2849 (1996)
Optical gain and carrier lifetime of InGaN multi‐quantum well structure laser diodes
Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Yasunobu Sugimoto and Hiroyuki Kiyoku
Appl. Phys. Lett. 69 , 1568 (1996)
Continuous‐wave operation of InGaN multi‐quantum‐well‐structure laser diodes at 233 K
Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Yasunobu Sugimoto and Hiroyuki Kiyoku
Appl. Phys. Lett. 69 , 3034 (1996)
Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes
Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Yasunobu Sugimoto and Hiroyuki Kiyoku
Appl. Phys. Lett. 69 , 4056 (1996)
Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Yasunobu Sugimoto and Hiroyuki Kiyoku
Appl. Phys. Lett. 70 , 868 (1997)
Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Yasunobu Sugimoto and Hiroyuki Kiyoku
Appl. Phys. Lett. 70 , 1417 (1997)
Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto, Tokuya Kozaki, Hitoshi Umemoto, Masahiko Sano and Kazuyuki Chocho
Appl. Phys. Lett. 72 , 2014 (1998)
Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy
Shigeo Yamaguchi, Michihiko Kariya, Shugo Nitta, Tetsuya Takeuchi, Christian Wetzel, Hiroshi Amano and Isamu Akasaki
J. Appl. Phys. 85 , 7682 (1999)
Anomalous features in the optical properties of Al1−xInxN on GaN grown by metal organic vapor phase epitaxy
Shigeo Yamaguchi, Michihiko Kariya, Shugo Nitta, Tetsuya Takeuchi, Christian Wetzel, Hiroshi Amano and Isamu Akasaki
Appl. Phys. Lett. 76 , 876 (2000)
Control of strain in GaN by a combination of H2 and N2 carrier gases
Shigeo Yamaguchi, Michihiko Kariya, Masayoshi Kosaki, Yohei Yukawa, Shugo Nitta, Hiroshi Amano and Isamu Akasaki
J. Appl. Phys. 89 , 7820 (2001)
Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy
Shigeo Yamaguchi, Yasuo Iwamura, Yasuhiro Watanabe, Masayoshi Kosaki, Yohei Yukawa, Shugo Nitta, Satoshi Kamiyama, Hiroshi Amano and Isamu Akasaki
Appl. Phys. Lett. 80 , 802 (2002)
Laser lift-off technique for freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes
Daisuke Iida, Syunsuke Kawai, Nobuaki Ema, Takayoshi Tsuchiya, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama and Isamu Akasaki
Appl. Phys. Lett. 105 , 072101 (2014)
Review article on the development of the materials used in the Nobel Laureates' work (free access through 12/31/14)
III–nitrides: Growth, characterization, and properties
S. C. Jain, M. Willander, J. Narayan and R. Van Overstraeten
J. Appl. Phys. 87, 965 (2000)
More than 120 related articles and conference proceedings from AIP Publishing (free access)
High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes
Shuji Nakamura, Takashi Mukai and Masayuki Senoh
J. Appl. Phys. 76 , 8189 (1994)
InGaN/AlGaN blue‐light‐emitting diodes
Shuji Nakamura
J. Vac. Sci. Technol. A 13 , 705 (1995)
High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes
Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa and Shin‐ichi Nagahama
Appl. Phys. Lett. 67 , 1868 (1995)
InGaN multi‐quantum‐well structure laser diodes grown on MgAl2O4 substrates
Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada,Toshio Matsushita, Hiroyuki Kiyoku and Yasunobu Sugimoto
Appl. Phys. Lett. 68 , 2105 (1996)
75 Å GaN channel modulation doped field effect transistors
Jinwook Burm, William J. Schaff, Lester F. Eastman, Hiroshi Amano and Isamu Akasaki
Appl. Phys. Lett. 68 , 2849 (1996)
Characteristics of InGaN multi‐quantum‐well‐structure laser diodes
Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada,Toshio Matsushita, Hiroyuki Kiyoku and Yasunobu Sugimoto
Appl. Phys. Lett. 68 , 3269 (1996)
Recombination dynamics of excitons and biexcitons in a hexagonal GaN epitaxial layer
Yoichi Kawakami, Zhi Gang Peng, Yukio Narukawa, Shizuo Fujita, Shigeo Fujita and Shuji Nakamura
Appl. Phys. Lett. 69 , 1414 (1996)
Ridge‐geometry InGaN multi‐quantum‐well‐structure laser diodes
Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada,Toshio Matsushita, Yasunobu Sugimoto and Hiroyuki Kiyoku
Appl. Phys. Lett. 69 , 1477 (1996)
Optical gain and carrier lifetime of InGaN multi‐quantum well structure laser diodes
Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada,Toshio Matsushita, Yasunobu Sugimoto and Hiroyuki Kiyoku
Appl. Phys. Lett. 69 , 1568 (1996)
Continuous-wave operation of InGaN multi‐quantum‐well‐structure laser diodes at 233 K
Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada,Toshio Matsushita, Yasunobu Sugimoto and Hiroyuki Kiyoku
Appl. Phys. Lett. 69 , 3034 (1996)
Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes
Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada,Toshio Matsushita, Yasunobu Sugimoto and Hiroyuki Kiyoku
Appl. Phys. Lett. 69 , 4056 (1996)
Hollow-anode plasma source for molecular beam epitaxy of gallium nitride
A. Anders, N. Newman, M. Rubin, M. Dickinson, E. Jones, P. Phatak and A. Gassmann
Rev. Sci. Instrum. 67, 905 (1996)
Biaxial strain dependence of exciton resonance energies in wurtzite GaN
Amane Shikanai, Takashi Azuhata, Takayuki Sota, Shigefusa Chichibu, Akito Kuramata,Kazuhiko Horino and Shuji Nakamura
J. Appl. Phys. 81 , 417 (1997)
Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure laser diodes
Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada,Toshio Matsushita, Yasunobu Sugimoto and Hiroyuki Kiyoku
Appl. Phys. Lett. 70 , 616 (1997)
Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada,Toshio Matsushita, Yasunobu Sugimoto and Hiroyuki Kiyoku
Appl. Phys. Lett. 70 , 868 (1997)http://dx.doi.org/10.1063/1.118300
Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
Yukio Narukawa, Yoichi Kawakami, Mitsuru Funato, Shizuo Fujita, Shigeo Fujita and Shuji Nakamura
Appl. Phys. Lett. 70 , 981 (1997)
Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada,Toshio Matsushita, Yasunobu Sugimoto and Hiroyuki Kiyoku
Appl. Phys. Lett. 70 , 1417 (1997)
Paramagnetic resonance in GaN-based single quantum wells
W. E. Carlos and Shuji Nakamura
Appl. Phys. Lett. 70 , 2019 (1997)
Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation
Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada,Toshio Matsushita, Yasunobu Sugimoto and Hiroyuki Kiyoku
Appl. Phys. Lett. 70 , 2753 (1997)
Spatially resolved cathodoluminescence spectra of InGaN quantum wells
Shigefusa Chichibu, Kazumi Wada and Shuji Nakamura
Appl. Phys. Lett. 71 , 2346 (1997)
InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada,Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto, Tokuya Kozaki, Hitoshi Umemoto,Masahiko Sano and Kazuyuki Chocho
Appl. Phys. Lett. 72 , 211 (1998)
Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada,Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto, Tokuya Kozaki, Hitoshi Umemoto,Masahiko Sano and Kazuyuki Chocho
Appl. Phys. Lett. 72 , 2014 (1998)
Exciton localization in InGaN quantum well devices
Shigefusa Chichibu, Takayuki Sota, Kazumi Wada and Shuji Nakamura
J. Vac. Sci. Technol. B 16 , 2204 (1998)
Observation of photoluminescence from Al1−xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy<br /> Shigeo Yamaguchi, Michihiko Kariya, Shugo Nitta, Tetsuya Takeuchi, Christian Wetzel,Hiroshi Amano and Isamu Akasaki
Appl. Phys. Lett. 73 , 830 (1998)
InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates
Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada,Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto, Tokuya Kozaki, Hitoshi Umemoto,Masahiko Sano and Kazuyuki Chocho
Appl. Phys. Lett. 73 , 832 (1998)
Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
Tetsuya Takeuchi, Christian Wetzel, Shigeo Yamaguchi, Hiromitsu Sakai, Hiroshi Amano,Isamu Akasaki, Yawara Kaneko, Shigeru Nakagawa, Yoshifumi Yamaoka and Norihide Yamada
Appl. Phys. Lett. 73 , 1691 (1998)
Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an In0.02Ga0.98N active layer
Yukio Narukawa, Shin Saijou, Yoichi Kawakami, Shigeo Fujita, Takashi Mukai and Shuji Nakamura
Appl. Phys. Lett. 74 , 558 (1999)
Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN
Tomasz J. Ochalski, Bernard Gil, Pierre Lefebvre, Nicolas Grandjean, Mathieu Leroux, Jean Massies, Shuji Nakamura and Hadis Morkoç
Appl. Phys. Lett. 74 , 3353 (1999)
Two-phonon absorption spectra in wurtzite GaN
Takashi Azuhata, Kazuhiro Shimada, Takahiro Deguchi, Takayuki Sota, Katsuo Suzuki,Shigefusa Chichibu and Shuji Nakamura
Appl. Phys. Lett. 75 , 2076 (1999)
Strain relief and its effect on the properties of GaN using isoelectronic In doping grown by metalorganic vapor phase epitaxy
Shigeo Yamaguchi, Michihiko Kariya, Shugo Nitta, Hiroshi Amano and Isamu Akasaki
Appl. Phys. Lett. 75 , 4106 (1999)
Blue InGaN-based laser diodes with an emission wavelength of 450 nm
Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Toshio Matsushita and Takashi Mukai
Appl. Phys. Lett. 76 , 22 (2000)
Dynamics of optical gain in InxGa1−xN multi-quantum-well-based laser diodes
Yoichi Kawakami, Yukio Narukawa, Kunimichi Omae, Shigeo Fujita and Shuji Nakamura
Appl. Phys. Lett. 77 , 2151 (2000)
Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices
Shigeo Yamaguchi, Masayoshi Kosaki, Yasuyukihiro Watanabe, Yohei Yukawa, Shugo Nitta,Hiroshi Amano and Isamu Akasaki
Appl. Phys. Lett. 79 , 3062 (2001)
Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
B. A. Haskell, F. Wu, M. D. Craven, S. Matsuda, P. T. Fini, T. Fujii, K. Fujito, S. P. DenBaars,J. S. Speck and Shuji Nakamura
Appl. Phys. Lett. 83 , 644 (2003)
Structural and morphological characteristics of planar (112̄0) a-plane gallium nitride grown by hydride vapor phase epitaxy
B. A. Haskell, F. Wu, S. Matsuda, M. D. Craven, P. T. Fini, S. P. DenBaars, J. S. Speck andShuji Nakamura
Appl. Phys. Lett. 83 , 1554 (2003)
Electrical Properties of Sulfur‐Doped Gallium Phosphide<
Tohru Hara and Isamu Akasakibr /> J. Appl. Phys. 39 , 285 (1968)
Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques
Takeyoshi Onuma, Shigefusa F. Chichibu, Akira Uedono, Takayuki Sota, Pablo Cantu,Thomas M. Katona, John F. Keading, Stacia Keller, Umesh K. Mishra, Shuji Nakamura andSteven P. DenBaars
J. Appl. Phys. 95 , 2495 (2004)
Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN
Arpan Chakraborty, Stacia Keller, Cedrik Meier, Benjamin A. Haskell, Salka Keller, Patrick Waltereit, Steven P. DenBaars, Shuji Nakamura, James S. Speck and Umesh K. Mishra
Appl. Phys. Lett. 86 , 031901 (2005)
Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxybr /> B. A. Haskell, T. J. Baker, M. B. McLaurin, F. Wu, P. T. Fini, S. P. DenBaars, J. S. Speck andShuji Nakamura
Appl. Phys. Lett. 86 , 111917 (2005)
Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire
Sandip Ghosh, Pranob Misra, H. T. Grahn, Bilge Imer, Shuji Nakamura, S. P. DenBaars andJ. S. Speck
J. Appl. Phys. 98 , 026105 (2005)
Visible resonant modes in GaN-based photonic crystal membrane cavities
Cedrik Meier, Kevin Hennessy, Elaine D. Haberer, Rajat Sharma, Yong-Seok Choi, Kelly McGroddy, Stacia Keller, Steven P. DenBaars, Shuji Nakamura and Evelyn L. Hu
Appl. Phys. Lett. 88 , 031111 (2006)
Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution
Aurélien David, Tetsuo Fujii, Rajat Sharma, Kelly McGroddy, Shuji Nakamura, Steven P. DenBaars, Evelyn L. Hu, Claude Weisbuch and Henri Benisty
Appl. Phys. Lett. 88 , 061124 (2006)
GaN light-emitting diodes with Archimedean lattice photonic crystals
Aurélien David, Tetsuo Fujii, Elison Matioli, Rajat Sharma, Shuji Nakamura, Steven P. DenBaars, Claude Weisbuch and Henri Benisty
Appl. Phys. Lett. 88 , 073510 (2006)
Photonic crystal laser lift-off GaN light-emitting diodes
Aurélien David, Tetsuo Fujii, Brendan Moran, Shuji Nakamura, Steven P. DenBaars, Claude Weisbuch and Henri Benisty
Appl. Phys. Lett. 88 , 133514 (2006)
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
Pranob Misra, Udo Behn, Oliver Brandt, Holger T. Grahn, Bilge Imer, Shuji Nakamura, Steven P. DenBaars and James S. Speck
Appl. Phys. Lett. 88 , 161920 (2006)
Hexagonal pyramid shaped light-emitting diodes based on ZnO and GaN direct wafer bonding
Akihiko Murai, Daniel B. Thompson, Hisashi Masui, Natalie Fellows, Umesh K. Mishra, Shuji Nakamura and Steven P. DenBaars
Appl. Phys. Lett. 89 , 171116 (2006)
Light-polarization characteristics of electroluminescence from InGaN/GaN light-emitting diodes prepared on (112¯2)-plane GaN
Hisashi Masui, Troy J. Baker, Michael Iza, Hong Zhong, Shuji Nakamura and Steven P. DenBaars
J. Appl. Phys. 100 , 113109 (2006)
Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness
P. Morgan Pattison, Aurelien David, Rajat Sharma, Claude Weisbuch, Steven DenBaars andShuji Nakamura
Appl. Phys. Lett. 90 , 031111 (2007)
Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy
Derrick S. Kamber, Yuan Wu, Edward Letts, Steven P. DenBaars, James S. Speck, Shuji Nakamura and Scott A. Newman
Appl. Phys. Lett. 90 , 122116 (2007)
High power and high efficiency blue light emitting diode on freestanding semipolar (101¯1¯) bulk GaN substrate
Hong Zhong, Anurag Tyagi, Natalie N. Fellows, Feng Wu, Roy B. Chung, Makoto Saito, Kenji Fujito, James S. Speck, Steven P. DenBaars and Shuji Nakamura
Appl. Phys. Lett. 90 , 233504 (2007)
Direct water photoelectrolysis with patterned n-GaN
Ichitaro Waki, Daniel Cohen, Rakesh Lal, Umesh Mishra, Steven P. DenBaars and Shuji Nakamura
Appl. Phys. Lett. 91 , 093519 (2007)
Study of nonpolar m-plane InGaN/GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition
Kwang-Choong Kim, Mathew C. Schmidt, Hitoshi Sato, Feng Wu, Natalie Fellows, Zhongyuan Jia, Makoto Saito, Shuji Nakamura, Steven P. DenBaars, James S. Speck and Kenji Fujito
Appl. Phys. Lett. 91 , 181120 (2007)
Gallium-nitride-based microcavity light-emitting diodes with air-gap distributed Bragg reflectors
Rajat Sharma, Yong-Seok Choi, Chiou-Fu Wang, Aurélien David, Claude Weisbuch, Shuji Nakamura and Evelyn L. Hu
Appl. Phys. Lett. 91 , 211108 (2007)
Impact of strain on free-exciton resonance energies in wurtzite AlN
Hirokatsu Ikeda, Takahiro Okamura, Kodai Matsukawa, Takayuki Sota, Mariko Sugawara,Takuya Hoshi, Pablo Cantu, Rajat Sharma, John F. Kaeding, Stacia Keller, Umesh K. Mishra,Kei Kosaka, Keiichiro Asai, Shigeaki Sumiya, Tomohiko Shibata, Mitsuhiro Tanaka, James S. Speck, Steven P. DenBaars, Shuji Nakamura, Takahiro Koyama, Takeyoshi Onuma andShigefusa F. Chichibu
J. Appl. Phys. 102 , 123707 (2007)
Optical polarization characteristics of InGaN/GaN light-emitting diodes fabricated on GaN substrates oriented between (101¯0) and (101¯1¯) planes
Hisashi Masui, Hisashi Yamada, Kenji Iso, Shuji Nakamura and Steven P. DenBaars
Appl. Phys. Lett. 92 , 091105 (2008)
Photoluminescence from highly excited AlN epitaxial layers
Yoichi Yamada, Kihyun Choi, Seungho Shin, Hideaki Murotani, Tsunemasa Taguchi, Narihito Okada and Hiroshi Amano
Appl. Phys. Lett. 92 , 131912 (2008)
Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates
Hitoshi Sato, Roy B. Chung, Hirohiko Hirasawa, Natalie Fellows, Hisashi Masui, Feng Wu,Makoto Saito, Kenji Fujito, James S. Speck, Steven P. DenBaars and Shuji Nakamura
Appl. Phys. Lett. 92 , 221110 (2008)
Dichromatic color tuning with InGaN-based light-emitting diodes
Natalie N. Fellows, Hitoshi Sato, You-da Lin, Roy B. Chung, Steven P. DenBaars and Shuji Nakamura
Appl. Phys. Lett. 93 , 121112 (2008)http://dx.doi.org/10.1063/1.2990761
Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth
Kwang-Choong Kim, Mathew C. Schmidt, Feng Wu, Melvin B. McLaurin, Asako Hirai, Shuji Nakamura, Steven P. DenBaars and James S. Speck
Appl. Phys. Lett. 93 , 142108 (2008)http://dx.doi.org/10.1063/1.2908978
High hole concentration in Mg-doped a-plane Ga1−xInxN (0<x<0.30) grown on r-plane sapphire substrate by metalorganic vapor phase epitaxy
Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano and Isamu Akasaki
Appl. Phys. Lett. 93 , 182108 (2008)http://dx.doi.org/10.1063/1.3021087
Evaluation of GaN substrates grown in supercritical basic ammonia
Makoto Saito, Hisashi Yamada, Kenji Iso, Hitoshi Sato, Hirohiko Hirasawa, Derrick S. Kamber, Tadao Hashimoto, Steven P. DenBaars, James S. Speck and Shuji Nakamura
Appl. Phys. Lett. 94 , 052109 (2009)http://dx.doi.org/10.1063/1.3079813
Measurement of electron overflow in 450 nm InGaN light-emitting diode structures
Kenneth J. Vampola, Michael Iza, Stacia Keller, Steven P. DenBaars and Shuji Nakamura
Appl. Phys. Lett. 94 , 061116 (2009)http://dx.doi.org/10.1063/1.3081059
Photoelectrochemical etching of p-type GaN heterostructures
Adele C. Tamboli, Asako Hirai, Shuji Nakamura, Steven P. DenBaars and Evelyn L. Hu
Appl. Phys. Lett. 94 , 151113 (2009)http://dx.doi.org/10.1063/1.3120545
Temperature dependence of excitonic transitions in a-plane AlN epitaxial layers
Hideaki Murotani, Takahiro Kuronaka, Yoichi Yamada, Tsunemasa Taguchi, Narihito Okada and Hiroshi Amano
J. Appl. Phys. 105 , 083533 (2009)http://dx.doi.org/10.1063/1.3116183
Characterization of blue-green m-plane InGaN light emitting diodes
You-Da Lin, Arpan Chakraborty, Stuart Brinkley, Hsun Chih Kuo, Thiago Melo, Kenji Fujito,James S. Speck, Steven P. DenBaars and Shuji Nakamura
Appl. Phys. Lett. 94 , 261108 (2009)http://dx.doi.org/10.1063/1.3167824
m-plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers
You-Da Lin, Chia-Yen Huang, Matthew T. Hardy, Po Shan Hsu, Kenji Fujito, Arpan Chakraborty, Hiroaki Ohta, James S. Speck, Steven P. DenBaars and Shuji Nakamura
Appl. Phys. Lett. 95 , 081110 (2009)http://dx.doi.org/10.1063/1.3212146
Noise measurement system at electron temperature down to 20 mK with combinations of the low pass filters
Masayuki Hashisaka, Yoshiaki Yamauchi, Kensaku Chida, Shuji Nakamura, Kensuke Kobayashi and Teruo Ono
Rev. Sci. Instrum. 80 , 096105 (2009)http://dx.doi.org/10.1063/1.3227029
Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates
Anurag Tyagi, Feng Wu, Erin C. Young, Arpan Chakraborty, Hiroaki Ohta, Rajaram Bhat,Kenji Fujito, Steven P. DenBaars, Shuji Nakamura and James S. Speck
Appl. Phys. Lett. 95 , 251905 (2009)http://dx.doi.org/10.1063/1.3275717
Spin Polarization in a Curvature‐controlled Quantum Point Contact
Shuji Nakamura, Masayuki Hashisaka, Yoshiaki Yamauchi, Shinya Kasai, Teruo Ono andKensuke Kobayashi
AIP Conf. Proc. 1199 , 451 (2010)http://dx.doi.org/10.1063/1.3295500
Bolometric Shot Noise Detection in Coupled Quantum Point Contacts
Masayuki Hashisaka, Yoshiaki Yamauchi, Shuji Nakamura, Shinya Kasai, Teruo Ono andKensuke Kobayashi
AIP Conf. Proc. 1199 , 367 (2010)http://dx.doi.org/10.1063/1.3295455
< p>Optical waveguide simulations for the optimization of InGaN-based green laser diodes
Chia-Yen Huang, You-Da Lin, Anurag Tyagi, Arpan Chakraborty, Hiroaki Ohta, James S. Speck, Steven P. DenBaars and Shuji Nakamura
J. Appl. Phys. 107 , 023101 (2010)http://dx.doi.org/10.1063/1.3275325
Technique to evaluate the diode ideality factor of light-emitting diodes
Hisashi Masui, Shuji Nakamura and Steven P. DenBaars
Appl. Phys. Lett. 96 , 073509 (2010)http://dx.doi.org/10.1063/1.3318285
Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN
Feng Wu, You-Da Lin, Arpan Chakraborty, Hiroaki Ohta, Steven P. DenBaars, Shuji Nakamura and James S. Speck
Appl. Phys. Lett. 96 , 231912 (2010)http://dx.doi.org/10.1063/1.3447940
Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells
Vytautas Liuolia, Saulius Marcinkevičius, You-Da Lin, Hiroaki Ohta, Steven P. DenBaars andShuji Nakamura
J. Appl. Phys. 108 , 023101 (2010)http://dx.doi.org/10.1063/1.3460278
Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes
Stuart E. Brinkley, You-Da Lin, Arpan Chakraborty, Nathan Pfaff, Daniel Cohen, James S. Speck, Shuji Nakamura and Steven P. DenBaars
Appl. Phys. Lett. 98 , 011110 (2011)http://dx.doi.org/10.1063/1.3541655
High internal and external quantum efficiency InGaN/GaN solar cells
Elison Matioli, Carl Neufeld, Michael Iza, Samantha C. Cruz, Ali A. Al-Heji, Xu Chen, Robert M. Farrell, Stacia Keller, Steven DenBaars, Umesh Mishra, Shuji Nakamura, James Speck and Claude Weisbuch
Appl. Phys. Lett. 98 , 021102 (2011)http://dx.doi.org/10.1063/1.3540501
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
Alexey E. Romanov, Erin C. Young, Feng Wu, Anurag Tyagi, Chad S. Gallinat, Shuji Nakamura, Steve P. DenBaars and James S. Speck
J. Appl. Phys. 109 , 103522 (2011)http://dx.doi.org/10.1063/1.3590141
Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions
Tomonori Arakawa, Koji Sekiguchi, Shuji Nakamura, Kensaku Chida, Yoshitaka Nishihara,Daichi Chiba, Kensuke Kobayashi, Akio Fukushima, Shinji Yuasa and Teruo Ono
Appl. Phys. Lett. 98 , 202103 (2011)http://dx.doi.org/10.1063/1.3590921
Effect of doping and polarization on carrier collection in InGaN quantum well solar cells
Carl J. Neufeld, Samantha C. Cruz, Robert M. Farrell, Michael Iza, Jordan R. Lang, Stacia Keller, Shuji Nakamura, Steven P. DenBaars, James S. Speck and Umesh K. Mishra
Appl. Phys. Lett. 98 , 243507 (2011)http://dx.doi.org/10.1063/1.3595487
Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals
Elison Matioli, Stuart Brinkley, Kathryn M. Kelchner, Shuji Nakamura, Steven DenBaars,James Speck and Claude Weisbuch
Appl. Phys. Lett. 98 , 251112 (2011)http://dx.doi.org/10.1063/1.3602319
High optical polarization ratio from semipolar (202¯¯1¯) blue-green InGaN/GaN light-emitting diodes
Yuji Zhao, Shinichi Tanaka, Qimin Yan, Chia-Yen Huang, Roy B. Chung, Chih-Chien Pan,Kenji Fujito, Daniel Feezell, Chris G. Van de Walle, James S. Speck, Steven P. DenBaars andShuji Nakamura
Appl. Phys. Lett. 99 , 051109 (2011)http://dx.doi.org/10.1063/1.3619826
Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells
Carl J. Neufeld, Samantha C. Cruz, Robert M. Farrell, Michael Iza, Stacia Keller, Shuji Nakamura, Steven P. DenBaars, James S. Speck and Umesh K. Mishra
Appl. Phys. Lett. 99 , 071104 (2011)http://dx.doi.org/10.1063/1.3624850
Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2)semipolar heteroepitaxy
Po Shan Hsu, Erin C. Young, Alexey E. Romanov, Kenji Fujito, Steven P. DenBaars, Shuji Nakamura and James S. Speck
Appl. Phys. Lett. 99 , 081912 (2011)http://dx.doi.org/10.1063/1.3628459
Influence of Mg-doped barriers on semipolar (202¯1) multiple-quantum-well green light-emitting diodes
Chia-Yen Huang, Qimin Yan, Yuji Zhao, Kenji Fujito, Daniel Feezell, Chris G. Van de Walle,James S. Speck, Steven P. DenBaars and Shuji Nakamura
Appl. Phys. Lett. 99 , 141114 (2011)http://dx.doi.org/10.1063/1.3647560
High optical polarization ratio from semipolar ((202¯1¯)) blue-green InGaN/GaN light-emitting diodes
Yuji Zhao, Shinichi Tanaka, Qimin Yan, Chia-Yen Huang, Roy B. Chung, Chih-Chien Pan,Kenji Fujito, Daniel Feezell, Chris G. Van de Walle, James S. Speck, Steven P. DenBaars andShuji Nakamura
Appl. Phys. Lett. 99 , 229902 (2011)http://dx.doi.org/10.1063/1.3665683
Robust thermal performance of Sr2Si5N8:Eu2+: An efficient red emitting phosphor for light emitting diode based white lighting
Stuart E. Brinkley, Nathan Pfaff, Kristin A. Denault, Zhijun Zhang, H. T. (Bert) Hintzen, Ram Seshadri, Shuji Nakamura and Steven P. DenBaars
Appl. Phys. Lett. 99 , 241106 (2011)http://dx.doi.org/10.1063/1.3666785
High temperature thermoelectric properties of optimized InGaN
Alexander Sztein, Hiroaki Ohta, John E. Bowers, Steven P. DenBaars and Shuji Nakamura
J. Appl. Phys. 110 , 123709 (2011)http://dx.doi.org/10.1063/1.3670966
Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021¯¯¯¯) InGaN/GaN quantum wells
Chia-Yen Huang, Matthew T. Hardy, Kenji Fujito, Daniel F. Feezell, James S. Speck, Steven P. DenBaars and Shuji Nakamura
Appl. Phys. Lett. 99 , 241115 (2011)http://dx.doi.org/10.1063/1.3666791
Nonequilibrium fluctuation relations in a quantum coherent conductor
Shuji Nakamura, Yoshiaki Yamauchi, Masayuki Hashisaka, Kensaku Chida, Kensuke Kobayashi, Teruo Ono, Renaud Leturcq, Klaus Ensslin, Keiji Saito, Yasuhiro Utsumi andArthur C. Gossard
AIP Conf. Proc. 1399 , 329 (2011)
444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer
Po Shan Hsu, Matthew T. Hardy, Feng Wu, Ingrid Koslow, Erin C. Young, Alexey E. Romanov, Kenji Fujito, Daniel F. Feezell, Steven P. DenBaars, James S. Speck and Shuji Nakamura
Appl. Phys. Lett. 100 , 021104 (2012)
The polarization field dependence of Ti/Al based Ohmic contacts on N-type semipolar GaN
Roy B. Chung, Hung-Tse Chen, Chih-Chien Pan, Jun-Seok Ha, Steven P. DenBaars andShuji Nakamura
Appl. Phys. Lett. 100 , 091104 (2012)
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
Yan-Ling Hu, Robert M. Farrell, Carl J. Neufeld, Michael Iza, Samantha C. Cruz, Nathan Pfaff,Dobri Simeonov, Stacia Keller, Shuji Nakamura, Steven P. DenBaars, Umesh K. Mishra andJames S. Speck
Appl. Phys. Lett. 100 , 161101 (2012)
384 nm laser diode grown on a (202¯1) semipolar relaxed AlGaN buffer layer
Daniel A. Haeger, Erin C. Young, Roy B. Chung, Feng Wu, Nathan A. Pfaff, Min Tsai, Kenji Fujito, Steven P. DenBaars, James S. Speck, Shuji Nakamura and Daniel A. Cohen
Appl. Phys. Lett. 100 , 161107 (2012)
Double embedded photonic crystals for extraction of guided light in light-emitting diodes
Jason Jewell, Dobri Simeonov, Shih-Chieh Huang, Yan-Ling Hu, Shuji Nakamura, James Speck and Claude Weisbuch
Appl. Phys. Lett. 100 , 171105 (2012)
Stress relaxation and critical thickness for misfit dislocation formation in (101¯0) and (3031¯¯¯¯) InGaN/GaN heteroepitaxy
Po Shan Hsu, Matthew T. Hardy, Erin C. Young, Alexey E. Romanov, Steven P. DenBaars,Shuji Nakamura and James S. Speck
Appl. Phys. Lett. 100 , 171917 (2012)
Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯)semipolar InGaN/GaN heterostructures
Matthew T. Hardy, Po Shan Hsu, Feng Wu, Ingrid L. Koslow, Erin C. Young, Shuji Nakamura,Alexey E. Romanov, Steven P. DenBaars and James S. Speck
Appl. Phys. Lett. 100 , 202103 (2012)
Shot noise suppression in InGaAs/InGaAsP quantum channels
Yoshitaka Nishihara, Shuji Nakamura, Kensuke Kobayashi, Teruo Ono, Makoto Kohda andJunsaku Nitta
Appl. Phys. Lett. 100 , 203111 (2012)
>Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
Yuji Zhao, Qimin Yan, Chia-Yen Huang, Shih-Chieh Huang, Po Shan Hsu, Shinichi Tanaka,Chih-Chien Pan, Yoshinobu Kawaguchi, Kenji Fujito, Chris G. Van de Walle, James S. Speck,Steven P. DenBaars, Shuji Nakamura and Daniel Feezell
Appl. Phys. Lett. 100 , 201108 (2012)
Influence of polarity on carrier transport in semipolar (2021¯¯¯¯) and (202¯1) multiple-quantum-well light-emitting diodes
Yoshinobu Kawaguchi, Chia-Yen Huang, Yuh-Renn Wu, Qimin Yan, Chih-Chien Pan, Yuji Zhao, Shinichi Tanaka, Kenji Fujito, Daniel Feezell, Chris G. Van de Walle, Steven P. DenBaars and Shuji Nakamura
Appl. Phys. Lett. 100 , 231110 (2012)
Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers
Ingrid L. Koslow, Matthew T. Hardy, Po Shan Hsu, Po-Yuan Dang, Feng Wu, Alexey Romanov, Yuh-Renn Wu, Erin C. Young, Shuji Nakamura, James S. Speck and Steven P. DenBaars
Appl. Phys. Lett. 101 , 121106 (2012)
The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes
Roy B. Chung, Changseok Han, Chih-Chien Pan, Nathan Pfaff, James S. Speck, Steven P. DenBaars and Shuji Nakamura
Appl. Phys. Lett. 101 , 131113 (2012)
Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (202¯1) InGaN/GaN heterostructures
Matthew T. Hardy, Erin C. Young, Po Shan Hsu, Daniel A. Haeger, Ingrid L. Koslow, Shuji Nakamura, Steven P. DenBaars and James S. Speck
Appl. Phys. Lett. 101 , 132102 (2012)
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
Erin C. Young, Feng Wu, Alexey E. Romanov, Daniel A. Haeger, Shuji Nakamura, Steven P. Denbaars, Daniel A. Cohen and James S. Speck
Appl. Phys. Lett. 101 , 142109 (2012)
Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates
Alexander Sztein, John E. Bowers, Steven P. DenBaars and Shuji Nakamura
J. Appl. Phys. 112 , 083716 (2012)
Suppression of relaxation in (202¯1) InGaN/GaN laser diodes using limited area epitaxy
Matthew T. Hardy, Shuji Nakamura, James S. Speck and Steven P. DenBaars
Appl. Phys. Lett. 101 , 241112 (2012)
Suppressing void defects in long wavelength semipolar (202¯1¯) InGaN quantum wells by growth rate optimization
Yuji Zhao, Feng Wu, Chia-Yen Huang, Yoshinobu Kawaguchi, Shinichi Tanaka, Kenji Fujito,James S. Speck, Steven P. DenBaars and Shuji Nakamura
Appl. Phys. Lett. 102 , 091905 (2013)
Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN
Alexander Sztein, John Haberstroh, John E. Bowers, Steven P. DenBaars and Shuji Nakamura
J. Appl. Phys. 113 , 183707 (2013)
Efficient and stable laser-driven white lighting
Kristin A. Denault, Michael Cantore, Shuji Nakamura, Steven P. DenBaars and Ram Seshadri
AIP Advances 3 , 072107 (2013)
Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes
Matthew T. Hardy, Casey O. Holder, Daniel F. Feezell, Shuji Nakamura, James S. Speck,Daniel A. Cohen and Steven P. DenBaars
Appl. Phys. Lett. 103 , 081103 (2013)
Effects of exciton localization on internal quantum efficiency of InGaN nanowires
Hideaki Murotani, Yoichi Yamada, Takuya Tabata, Yoshio Honda, Masahito Yamaguchi andHiroshi Amano
J. Appl. Phys. 114 , 153506 (2013)
Blue and aquamarine stress-relaxed semipolar (112¯2) laser diodes
Po Shan Hsu, Feng Wu, Erin C. Young, Alexey E. Romanov, Kenji Fujito, Steven P. DenBaars, James S. Speck and Shuji Nakamura
Appl. Phys. Lett. 103 , 161117 (2013)
True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy
Matthew T. Hardy, Feng Wu, Po Shan Hsu, Daniel A. Haeger, Shuji Nakamura, James S. Speck and Steven P. DenBaars
J. Appl. Phys. 114 , 183101 (2013)
Shot noise at the quantum point contact in InGaAs heterostructure
Yoshitaka Nishihara, Shuji Nakamura, Kensuke Kobayashi, Teruo Ono, Makoto Kohda andJunsaku Nitta
AIP Conf. Proc. 1566 , 311 (2013)
Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties
Alexander Sztein, John E. Bowers, Steven P. DenBaars and Shuji Nakamura
Appl. Phys. Lett. 104 , 042106 (2014)
In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy
Guangxu Ju, Yoshio Honda, Masao Tabuchi, Yoshikazu Takeda and Hiroshi Amano
J. Appl. Phys. 115 , 094906 (2014)
Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes
Yun Ji, Wei Liu, Talha Erdem, Rui Chen, Swee Tiam Tan, Zi-Hui Zhang, Zhengang Ju,Xueliang Zhang, Handong Sun, Xiao Wei Sun, Yuji Zhao, Steven P. DenBaars, Shuji Nakamura and Hilmi Volkan Demir
Appl. Phys. Lett. 104 , 143506 (2014)
Stacking faults and interface roughening in semipolar (202¯1¯) single InGaN quantum wells for long wavelength emission
Feng Wu, Yuji Zhao, Alexey Romanov, Steven P. DenBaars, Shuji Nakamura and James S. Speck
Appl. Phys. Lett. 104 , 151901 (2014)
Origin of electrons emitted into vacuum from InGaN light emitting diodes
Justin Iveland, Marco Piccardo, Lucio Martinelli, Jacques Peretti, Joo Won Choi, Nathan Young, Shuji Nakamura, James S. Speck and Claude Weisbuch
Appl. Phys. Lett. 105 , 052103 (2014)
Top 10 most cited papers related to the GaN devices (free access through 12/31/14)
Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films
Z. K. Tang, G. K. L. Wong, P. Yu, M. Kawasaki, A. Ohtomo, H. Koinuma, Y. Segawa
Appl. Phys. Lett. 72, 3270 (1998)
Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
S. Chichibu, T. Azuhata, T. Sota, S. Nakamura
Appl. Phys. Lett. 69, 4188 (1996)
Solid phase immiscibility in GaInN
I‐hsiu Ho, G. B. Stringfellow
Appl. Phys. Lett. 69, 2701 (1996)
Optical bandgap energy of wurtzite InN
Takashi Matsuoka, Hiroshi Okamoto, Masashi Nakao, Hiroshi Harima, Eiji Kurimoto
Appl. Phys. Lett. 81, 1246 (2002)
Blue‐green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells
H. Jeon, J. Ding, W. Patterson, A. V. Nurmikko, W. Xie, D. C. Grillo, M. Kobayashi, R. L. Gunshor
Appl. Phys. Lett. 59, 3619 (1991)
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
G. Martin, A. Botchkarev, A. Rockett, H. Morkoç
Appl. Phys. Lett. 68, 2541 (1996)
Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant
Kyoung-Kook Kim, Hyun-Sik Kim, Dae-Kue Hwang, Jae-Hong Lim, Seong-Ju Park
Appl. Phys. Lett. 83, 63 (2003)
High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes
Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa, Shin‐ichi Nagahama
Appl. Phys. Lett. 67, 1868 (1995)
High‐power InGaN/GaN double‐heterostructure violet light emitting diodes
Shuji Nakamura, Masayuki Senoh, Takashi Mukai
Appl. Phys. Lett. 62, 2390 (1993)
Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes
Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Yasunobu Sugimoto, Hiroyuki Kiyoku
Appl. Phys. Lett. 69, 4056 (1996)
Articles from AVS Science & Technology of Materials, Interfaces, and Processing
InGaN/AlGaN blue‐light‐emitting diodes
Shuji Nakamura
J. Vac. Sci. Technol. A 13 , 705 (1995)
Exciton localization in InGaN quantum well devices
Shigefusa Chichibu, Takayuki Sota, Kazumi Wada and Shuji Nakamura
J. Vac. Sci. Technol. B 16 , 2204 (1998)http://dx.doi.org/10.1116/1.590149