Cesium hydroxide doped tris-(8-hydroxyquinoline) aluminum as an effective electron injection layer in inverted bottom-emission organic light emitting diodes

Tao Xiong, Fengxia Wang, Xianfeng Qiao, and Dongge Ma
We demonstrate highly efficient inverted bottom-emission organic light-emitting diodes (IBOLEDs) by using cesium hydroxide (CsOH) doped tris-(8-hydroxyquinoline) aluminum (Alq) as the electron injection layer on indium tin oxide cathode, which could significantly enhance the electron injection, resu ... [Appl. Phys. Lett. 92, 263305 (2008)] published Thu Jul 3, 2008.

Controlled fabrication of single electron transistors from single-walled carbon nanotubes

Paul Stokes and Saiful I. Khondaker
Single electron transistors (SETs) are fabricated by placing single-walled carbon nanotubes (SWNTs) on a 100 nm wide local Al/AlO bottom gate and then contacting with Pd electrodes. Coulomb oscillations up to 125 K were observed and charging energies of 1215 meV with level spacing of ~5 meV were ... [Appl. Phys. Lett. 92, 262107 (2008)] published Thu Jul 3, 2008.

Cesium hydroxide doped tris-(8-hydroxyquinoline) aluminum as an effective electron injection layer in inverted bottom-emission organic light emitting diodes

Tao Xiong, Fengxia Wang, Xianfeng Qiao, and Dongge Ma
We demonstrate highly efficient inverted bottom-emission organic light-emitting diodes (IBOLEDs) by using cesium hydroxide (CsOH) doped tris-(8-hydroxyquinoline) aluminum (Alq) as the electron injection layer on indium tin oxide cathode, which could significantly enhance the electron injection, resu ... [Appl. Phys. Lett. 92, 263305 (2008)] published Thu Jul 3, 2008.

Spin-torque oscillator with tilted fixed layer magnetization

Yan Zhou, C. L. Zha, S. Bonetti, J. Persson, and Johan Akerman
A spin-torque oscillator with a fixed layer magnetization tilted out of the film plane is capable of strong microwave signal generation in zero magnetic field. Through numerical simulations, we study the microwave signal generation as a function of drive current for two realistic tilt angles. The ti ... [Appl. Phys. Lett. 92, 262508 (2008)] published Thu Jul 3, 2008.

Red-Emitting LiLa[sub 2]O[sub 2]BO[sub 3]:Sm[sup 3+],Eu[sup 3+] Phosphor for Near-Ultraviolet Light-Emitting Diodes-Based Solid-State Lighting

Yu-Ho Won, Ho Seong Jang, Won Bin Im, and Duk Young Jeon
A red-emitting LiLaOBO:Sm,Eu phosphor has been synthesized and characterized optically for white light-emitting diodes (LEDs). Because the oxyborate group (OBO) can contain high Eu concentration without concentration quenching, LiLaOBO is a suitable host material for red-emitting phosphor for near-u ... [J. Electrochem. Soc. 155, J226 (2008)] published Thu Jul 3, 2008.

Effect of local electrical properties on the electrostatic discharge withstand capability of multilayered chip ZnO varistors

Sakyo Hirose, Yoji Yamamoto, and Hideaki Niimi
The local electrical properties at individual grain boundaries of multilayered chip varistors composed of ZnOBiO (BiZnO) and ZnOPrO (PrZnO) ceramics have been investigated using a scanning probe microscope (SPM) to clarify their effect on the electrostatic discharge (ESD) withstand capabilities. PrZ ... [J. Appl. Phys. 104, 013701 (2008)] published Thu Jul 3, 2008.

Home photovoltaic systems for physicists

Thomas W. Murphy, Jr.
Physicists seldom allow students in their courses to escape without understanding and being able to perform calculations pertaining to energy. Outside of science circles, however, energy generally refers not to an overall conserved quantity but rather to the large-scale conversion of stored energy i ... [Phys. Today 61, 42 (2008)] published Wed Jul 2, 2008.

Improved electrical properties of Ge metal-oxide-semiconductor capacitor with HfTa-based gate dielectric by using TaO[sub x]N[sub y] interlayer

X. F. Zhang, J. P. Xu, C. X. Li, P. T. Lai, C. L. Chan et al.
HfTa-based oxide and oxynitride with or without TaON interlayer are fabricated on Ge substrate to form metal-oxide-semiconductor (MOS) capacitors. Their electrical properties and reliabilities are measured and compared. The results show that the MOS capacitor with a gate stack of HfTa-based oxynitri ... [Appl. Phys. Lett. 92, 262902 (2008)] published Wed Jul 2, 2008.

Integrated circuits based on nanoscale vacuum phototubes

Gilad Diamant, Erez Halahmi, Leeor Kronik, Jeff Levy, Ron Naaman et al.
We present and experimentally verify a concept for electronic devices based on nanoscale vacuum phototubes. Such devices are expected to be both reliable and amenable to large-scale integration. We further suggest several generalizations of the concept and discuss possible applications and advantage ... [Appl. Phys. Lett. 92, 262903 (2008)] published Wed Jul 2, 2008.

Passivation effects on ZnO nanowire field effect transistors under oxygen, ambient, and vacuum environments

Sunghoon Song, Woong-Ki Hong, Soon-Shin Kwon, and Takhee Lee
We investigated the passivation effects on the electrical characteristics of ZnO nanowire field effect transistors (FETs) under the various oxygen environments of ambient air, dry O, and vacuum. When the ZnO nanowire FET was exposed to more oxygen, the current decreased and the threshold voltage shi ... [Appl. Phys. Lett. 92, 263109 (2008)] published Wed Jul 2, 2008.

Multistability in nonlinear left-handed transmission lines

David A. Powell, Ilya V. Shadrivov, and Yuri S. Kivshar
Employing a nonlinear left-handed transmission line as a model system, we demonstrate experimentally the multistability phenomena predicted theoretically for microstructured left-handed metamaterials with a nonlinear response. We show that the bistability is associated with the period doubling, whic ... [Appl. Phys. Lett. 92, 264104 (2008)] published Wed Jul 2, 2008.

Quantum dot nanocolumn photodetectors for light detection in the infrared

M. Boberl, M. V. Kovalenko, G. Pillwein, G. Brunthaler, and W. Heiss
Colloidal quantum dots absorbing in the infrared are filled into nanoporous alumina membranes to form narrow columns with aspect ratios of 300:1. The columns define the charge carrier path vertical through the ordered pore structure of the membrane. Electrical transport and photocurrent of various q ... [Appl. Phys. Lett. 92, 261113 (2008)] published Wed Jul 2, 2008.

Dependence of field-effect mobility and contact resistance on nanostructure in regioregular poly(3-hexylthiophene) thin film transistors

K. A. Singh, G. Sauve, R. Zhang, T. Kowalewski, R. D. McCullough et al.
The mobility and contact resistance of transistors based on regioregular poly(3-hexylthiophene) (P3HT) with Ti/Pt electrodes were investigated as a function of the molecular weight (M) of P3HT. For an increase in M from 5.5 to 11 kDa, the mobility increased from 0.04 to 0.16 cm V s, whereas ... [Appl. Phys. Lett. 92, 263303 (2008)] published Wed Jul 2, 2008.

Three-dimensional magnetic microstructures fabricated by microstereolithography

Kengo Kobayashi and Koji Ikuta
Our group has developed a magnetically modified photocurable polymer for use in microstereolithography to fabricate magnetic microstructures and microactuators having three-dimensionally complex structures. This polymer is prepared by mixing a photocurable polymer with magnetic particles together wi ... [Appl. Phys. Lett. 92, 262505 (2008)] published Wed Jul 2, 2008.

Dependence of field-effect mobility and contact resistance on nanostructure in regioregular poly(3-hexylthiophene) thin film transistors

K. A. Singh, G. Sauve, R. Zhang, T. Kowalewski, R. D. McCullough et al.
The mobility and contact resistance of transistors based on regioregular poly(3-hexylthiophene) (P3HT) with Ti/Pt electrodes were investigated as a function of the molecular weight (M) of P3HT. For an increase in M from 5.5 to 11 kDa, the mobility increased from 0.04 to 0.16 cm V s, whereas ... [Appl. Phys. Lett. 92, 263303 (2008)] published Wed Jul 2, 2008.

High-T[sub c] superconducting quantum interference devices: Status and perspectives

Hong-Chang Yang, Ji-Chen Chen, Kuen-Lin Chen, Chiu-Hsien Wu, Herng-Er Horng et al.
In this paper, an overview of the current status of high-T superconducting quantum interference devices (SQUIDs), from device engineering to biomagnetic applications, is given. The authors offer a description of the current status of SQUID sensors, challenges encountered, and the solution of fabrica ... [J. Appl. Phys. 104, 011101 (2008)] published Wed Jul 2, 2008.

All-optical implementation of S-R, clocked S-R, and D flip-flops using nonlinear material

Shantanu Dhar and Samir Sahu
A nonlinear-material-based all-optical switching mechanism is utilized to develop the optical flip-flop. As flip-flops are sequential logic circuits, the present state of outputs is dependent on both the present inputs as well as the past outputs. In our present scheme, the outputs are fed back to t ... [Opt. Eng. 47, 065401 (2008)] published Wed Jul 2, 2008.

High-T[sub c] superconducting quantum interference devices: Status and perspectives

Hong-Chang Yang, Ji-Chen Chen, Kuen-Lin Chen, Chiu-Hsien Wu, Herng-Er Horng et al.
In this paper, an overview of the current status of high-T superconducting quantum interference devices (SQUIDs), from device engineering to biomagnetic applications, is given. The authors offer a description of the current status of SQUID sensors, challenges encountered, and the solution of fabrica ... [J. Appl. Phys. 104, 011101 (2008)] published Wed Jul 2, 2008.

Simultaneous sensing and actuation with a piezoelectric tube scanner

S. O. Reza Moheimani and Yuen K. Yong
Piezoelectric tube scanners with quartered external electrodes are the most widely used nanopositioning technology in modern scanning probe microscopes. There has been increasing interest in utilizing feedback control techniques to improve bandwidth and accuracy of these nanopositioners. The use of ... [Rev. Sci. Instrum. 79, 073702 (2008)] published Wed Jul 2, 2008.

Consistency of Ground State and Spectroscopic Measurements on Flux Qubits

A. Izmalkov, S. H. W. van der Ploeg, S. N. Shevchenko, M. Grajcar, E. Il'ichev et al.
We compare the results of ground state and spectroscopic measurements carried out on superconducting flux qubits which are effective two-level quantum systems. For a single qubit and for two coupled qubits we show excellent agreement between the parameters of the pseudospin Hamiltonian found using b ... [Phys. Rev. Lett. 101, 017003 (2008)] published Wed Jul 2, 2008.

Effect of structure and surface morphology of sol-gel derived TiO[sub 2] photoelectrode on the performance of dye-sensitized solar cells

M. F. Hossain, S. Biswas, T. Takahashi, Y. Kubota, and A. Fujishima
Nanocrystalline TiO photoelectrodes were successfully deposited on SnO:F coated glass substrate by sol-gel technique with different polyethylene glycol (PEG) concentrations. Low cost chlorophyllin based dye was used along with carbon paste on SnO:F glass as a counterelectrode. All the TiO electrodes ... [J. Vac. Sci. Technol. A 26, 1007 (2008)] published Tue Jul 1, 2008.

Programmable memory devices using gold nanoparticles capped with alkanethiols of different carbon chain lengths

Pei Ying Lai and J. S. Chen
Electrical bistability is demonstrated in a polymer memory device using polystyrene containing an organic conjugated compound (8-hydroxyquinoline) and gold nanoparticles (Au NPs) capped with different alkanethiols of carbon chain lengths as the active layer between two metal electrodes. Au NPs cappe ... [J. Vac. Sci. Technol. A 26, 1062 (2008)] published Tue Jul 1, 2008.

Effect of substrate temperature on the facing target sputter deposited TiO[sub 2] photoelectrode of dye-sensitized solar cells

M. F. Hossain, S. Biswas, T. Takahashi, Y. Kubota, and A. Fujishima
Nanocrystalline TiO photoelectrodes were successfully deposited on SnO:F coated glass substrate by facing target reactive sputtering technique with different substrate temperatures ranging from room temperature to 400 degrees C. Low cost chlorophylline based dye was used along with carbon paste on ... [J. Vac. Sci. Technol. A 26, 1012 (2008)] published Tue Jul 1, 2008.

Top-emitting organic light-emitting diodes with Ba/Ag/indium tin oxide cathode and built-in potential analyses in these devices

J. T. Lim, J. H. Lee, G. Y. Yeom, E. H. Lee, and T. W. Kim
Top-emitting organic light-emitting diodes (TEOLEDs) with a thin semitransparent conducting cathode (STCC) of Ba/Ag/indium tin oxide (ITO) were fabricated and their electric/optical characteristics were investigated. At the wavelength of 520 nm, optical properties of STCC of the Ba(3 nm)/Ag(15 nm ... [J. Vac. Sci. Technol. A 26, 961 (2008)] published Tue Jul 1, 2008.

Optical radiation selective photodetectors based on III nitrides

R. Pillai, D. Starikov, C. Boney, and A. Bensaoula
Wide direct band gap III nitride materials have opened up many new optoelectronic applications because they allow access to a very wide spectral range, from 200 nm to 1.77 [mu]m, from a single material system. Both light emission sources and photodetectors with advanced properties can be achieve ... [J. Vac. Sci. Technol. A 26, 970 (2008)] published Tue Jul 1, 2008.

Dry etching of extreme ultraviolet lithography mask structures in inductively coupled plasmas

D. Y. Kim, H. J. Lee, H. Y. Jung, N.-E. Lee, T. G. Kim et al.
Extreme ultraviolet lithography (EUVL) is currently being examined for its potential use in the next generation of lithography techniques. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics. This study investigated the etching pro ... [J. Vac. Sci. Technol. A 26, 857 (2008)] published Tue Jul 1, 2008.

Organic solar cells with solution-processed graphene transparent electrodes

Junbo Wu, Hector A. Becerril, Zhenan Bao, Zunfeng Liu, Yongsheng Chen et al.
We demonstrate that solution-processed graphene thin films can serve as transparent conductive anodes for organic photovoltaic cells. The graphene electrodes were deposited on quartz substrates by spin coating of an aqueous dispersion of functionalized graphene, followed by a reduction process to re ... [Appl. Phys. Lett. 92, 263302 (2008)] published Tue Jul 1, 2008.

Cool white III-nitride light emitting diodes based on phosphor-free indium-rich InGaN nanostructures

C. B. Soh, W. Liu, J. H. Teng, S. Y. Chow, S. S. Ang et al.
Phosphor-free cool white emitting light emitting diodes (LEDs) have been fabricated using a dual stacked InGaN/GaN multiple quantum wells (MQWs) comprising of a lower set of MQWs emitting yellow and an upper set of MQWs emitting blue. The lower set of MQWs incorporates indium-rich InGaN connected-do ... [Appl. Phys. Lett. 92, 261909 (2008)] published Tue Jul 1, 2008.

Monocrystalline Al[sub x]Ga[sub 1 - x]As heterostructures for high-reflectivity high-Q micromechanical resonators in the megahertz regime

Garrett D. Cole, Simon Groblacher, Katharina Gugler, Sylvain Gigan, and Markus Aspelmeyer
We present high-performance megahertz micromechanical oscillators based on freestanding epitaxial AlGaAs distributed Bragg reflectors. Compared with dielectric reflectors, the low mechanical loss of the monocrystalline heterostructure gives rise to significant improvements in the achievable mechanic ... [Appl. Phys. Lett. 92, 261108 (2008)] published Tue Jul 1, 2008.

Organic solar cells with solution-processed graphene transparent electrodes

Junbo Wu, Hector A. Becerril, Zhenan Bao, Zunfeng Liu, Yongsheng Chen et al.
We demonstrate that solution-processed graphene thin films can serve as transparent conductive anodes for organic photovoltaic cells. The graphene electrodes were deposited on quartz substrates by spin coating of an aqueous dispersion of functionalized graphene, followed by a reduction process to re ... [Appl. Phys. Lett. 92, 263302 (2008)] published Tue Jul 1, 2008.

Enhanced characteristics of blue InGaN/GaN light-emitting diodes by using selective activation to modulate the lateral current spreading length

Ray-Ming Lin, Yuan-Chieh Lu, Yi-Lun Chou, Guo-Hsing Chen, Yung-Hsiang Lin et al.
We have studied the characteristics of blue InGaN/GaN multiquantum-well light-emitting diodes (LEDs) after reducing the length of the lateral current path through the transparent layer through formation of a peripheral high-resistance current-blocking region in the Mg-doped GaN layer. To study the m ... [Appl. Phys. Lett. 92, 261105 (2008)] published Tue Jul 1, 2008.

Optical detection of deoxyribonucleic acid hybridization with InGaN/GaN multiple quantum wells

H. Y. Shih, T. T. Chen, C. H. Wang, K. Y. Chen, and Y. F. Chen
Based on the high surface sensitivity of piezoelectric polarization of strained nitride semiconductors, surface functionalized nitride light emitting devices (LEDs) provide an excellent opportunity for the development of biological sensors. To demonstrate our working principle, a probe chip based on ... [Appl. Phys. Lett. 92, 261910 (2008)] published Tue Jul 1, 2008.

Offset reduction in Hall effect measurements using a nonswitching van der Pauw technique

O. Riss, E. Shaked, M. Karpovsky, and A. Gerber
A nonswitching van der Pauw technique, which uses two electrically isolated alternating current sources operating at two different frequencies and two lock-in amplifiers, is suggested for Hall effect measurements. Parasitic offset voltage, typical for this type of measurements, is reduced by averagi ... [Rev. Sci. Instrum. 79, 073901 (2008)] published Tue Jul 1, 2008.

Current multiplication by using multiple thyristors

Z. Liu, A. J. M. Pemen, E. J. M. Van Heesch, and G. J. J. Winands
This paper presents a circuit topology to obtain current multiplication by using multiple thyristors. To gain insight into this technique, an equivalent circuit model is introduced. Proper operation of the topology was demonstrated by experiments on a small-scale setup including three thyristors. On ... [Rev. Sci. Instrum. 79, 075101 (2008)] published Tue Jul 1, 2008.

A 1 MA, variable risetime pulse generator for high energy density plasma research

J. B. Greenly, J. D. Douglas, D. A. Hammer, B. R. Kusse, S. C. Glidden et al.
COBRA is a 0.5 Omega pulse generator driving loads of order 10 nH inductance to >1 MA current. The design is based on independently timed, laser-triggered switching of four water pulse-forming lines whose outputs are added in parallel to drive the load current pulse. The detailed design and opera ... [Rev. Sci. Instrum. 79, 073501 (2008)] published Tue Jul 1, 2008.

Vibration Suppression Using Electromagnetic Resonant Shunt Damper

Tsuyoshi Inoue, Yukio Ishida, and Masaki Sumi
An electromagnetic actuator has the property to convert mechanical energy to electrical energy and vice versa. In this study, an electromagnetic resonant shunt damper, consisting of a voice coil motor with an electric resonant shunt circuit, is proposed. The optimal design of the shunt circuit is ob ... [J. Vib. Acoust. 130, 041003 (2008)] published Tue Jul 1, 2008.

Iris recognition using local texture analysis

Jen-Chun Lee, Ping Sheng Huang, Jyh-Chian Chang, Chien-Ping Chang, and Te-Ming Tu
With the increasing needs in security systems, iris recognition is reliable as one of the important solutions for biometrics-based identification systems. This work presents an effective approach for iris recognition by analyzing iris patterns. To improve the rate of recognition, we divide the norma ... [Opt. Eng. 47, 067205 (2008)] published Tue Jul 1, 2008.

Quantum Conductance Oscillations in Metal/Molecule/Metal Switches at Room Temperature

Feng Miao, Douglas Ohlberg, Duncan R. Stewart, R. Stanley Williams, and Chun Ning Lau
We apply pressure-modulated conductance microscopy to metal/molecule/metal switches. Apart from pressure-induced conductance peaks that indicate nanoscale conducting pathways, we also observe dips and oscillations for devices with conductance between 1 and 2 conductance quantum. The conductance osci ... [Phys. Rev. Lett. 101, 016802 (2008)] published Tue Jul 1, 2008.

Coupling Efficiency for Phase Locking of a Spin Transfer Nano-Oscillator to a Microwave Current

B. Georges, J. Grollier, M. Darques, V. Cros, C. Deranlot et al.
The phase locking behavior of spin transfer nano-oscillators (STNOs) to an external microwave signal is experimentally studied as a function of the STNO intrinsic parameters. We extract the coupling strength from our data using the derived phase dynamics of a forced STNO. The predicted trends on the ... [Phys. Rev. Lett. 101, 017201 (2008)] published Tue Jul 1, 2008.

Main determinants for III--V metal-oxide-semiconductor field-effect transistors (invited)

Peide D. Ye
Lacking a suitable gate insulator, practical GaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) have remained all but a dream for more than four decades. The physics and chemistry of IIIV compound semiconductor surfaces or interfaces are problems so complex that our understanding is s ... [J. Vac. Sci. Technol. A 26, 697 (2008)] published Mon Jun 30, 2008.

Influence of a post--chemical mechanical polishing cleaning process on the ferroelectric properties of a Pb(Zr,Ti)O[sub 3] thin film capacitor fabricated by the damascene process

Nam-Hoon Kim, Young-Kil Jun, Pil-Ju Ko, and Woo-Sun Lee
The author first applied a chemical mechanical polishing (CMP) process to fabricate a ferroelectric Pb(Zr,Ti)O (PZT) capacitor instead of using a plasma etching process for the vertical profile without plasma damage in their previous study. The post-CMP cleaning process was very important in this CM ... [J. Vac. Sci. Technol. A 26, 720 (2008)] published Mon Jun 30, 2008.

Fabrication and characterization of a pentacene thin film transistor with a polymer insulator as a gate dielectric

Chulwoo Lee, Jungmin Ko, Junyoung Lee, and Ilsub Chung
An organic thin film transistor (OTFT) with a back gate structure on a patterned pentacene active region was fabricated. The variations of electrical properties as a function of polyvinylcinnamate (PVCN) concentration used as a gate dielectric were evaluated. In addition, the morphology of the penta ... [J. Vac. Sci. Technol. A 26, 710 (2008)] published Mon Jun 30, 2008.

Process development and material characterization of polycrystalline Bi[sub 2]Te[sub 3], PbTe, and PbSnSeTe thin films on silicon for millimeter-scale thermoelectric generators

I. Boniche, B. C. Morgan, P. J. Taylor, C. D. Meyer, and D. P. Arnold
In this work, deposition, patterning, and metallization of vapor-deposited polycrystalline thermoelectric (TE) thin films of BiTe, PbTe, and PbSnSeTe on silicon (Si) substrates are investigated. These fundamental microfabrication methods are intended for use in integrating TE films into thermally po ... [J. Vac. Sci. Technol. A 26, 739 (2008)] published Mon Jun 30, 2008.

Magnetic flux noise in the three-Josephson-junction superconducting ring

E. Il'ichev and A. N. Omelyanchouk
We analyze the influence of noise on magnetic properties of a superconducting loop which contains three Josephson junctions. This circuit is a classical analog of a persistent current (flux) qubit. A loop supercurrent induced by external magnetic field in the presence of thermal fluctuations is calc ... [Low Temp. Phys. 34, 413 (2008)] published Mon Jun 30, 2008.

A new instrument for automated microcontact printing with stamp load adjustment

Elie Bou Chakra, Benjamin Hannes, Gilles Dilosquer, Colin D. Mansfield, and Michel Cabrera
An instrument for automated microcontact printing ([mu]CP) on microscope slides is described. The movement of the stamp, which is actuated by a computer controlled pneumatic actuator, is precisely guided until it makes contact with the substrate. As a consequence, the absolute position of the microp ... [Rev. Sci. Instrum. 79, 064102 (2008)] published Mon Jun 30, 2008.

A ceramic radial insulation structure for a relativistic electron beam vacuum diode

Tao Xun, Hanwu Yang, Jiande Zhang, Zhenxiang Liu, Yong Wang et al.
For one kind of a high current diode composed of a small disk-type alumina ceramic insulator water/vacuum interface, the insulation structure was designed and experimentally investigated. According to the theories of vacuum flashover and the rules for radial insulators, a cone-column anode outline a ... [Rev. Sci. Instrum. 79, 063303 (2008)] published Mon Jun 30, 2008.

Efficient single layer solution-processed blue-emitting electrophosphorescent devices based on a small-molecule host

Liudong Hou, Lian Duan, Juan Qiao, Wei Li, Deqiang Zhang et al.
We report highly efficient single layer solution-processed blue small-molecule electrophosphorescent organic light-emitting diodes with iridium (III) bis[2-(4,6-difluorophenyl)-pyridinato-N,C]picolinate (FIrpic) doped into a wide-gap 9,9-bis[4-(3 c6-di-tert-butylcarbazol-9-yl)phenyl]fluorene (TBCPF) ... [Appl. Phys. Lett. 92, 263301 (2008)] published Mon Jun 30, 2008.

Comparison of leakage behaviors in p- and n-type metal-oxide-semiconductor capacitors with hafnium silicon oxynitride gate dielectric by electron-beam-induced current

Jun Chen, Takashi Sekiguchi, Naoki Fukata, Masami Takase, Toyohiro Chikyo et al.
The gate leakage behaviors of p- and n-type metal-oxide-semiconductor (p/nMOS) capacitors with hafnium silicon oxynitride (HfSiON) gate dielectric were microscopically investigated by electron-beam-induced current (EBIC) technique. Carrier separated EBIC measurement has found that in nonstressed sam ... [Appl. Phys. Lett. 92, 262103 (2008)] published Mon Jun 30, 2008.

Efficient single layer solution-processed blue-emitting electrophosphorescent devices based on a small-molecule host

Liudong Hou, Lian Duan, Juan Qiao, Wei Li, Deqiang Zhang et al.
We report highly efficient single layer solution-processed blue small-molecule electrophosphorescent organic light-emitting diodes with iridium (III) bis[2-(4,6-difluorophenyl)-pyridinato-N,C]picolinate (FIrpic) doped into a wide-gap 9,9-bis[4-(3 c6-di-tert-butylcarbazol-9-yl)phenyl]fluorene (TBCPF) ... [Appl. Phys. Lett. 92, 263301 (2008)] published Mon Jun 30, 2008.

Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors

Takuma Nanjo, Misaichi Takeuchi, Muneyoshi Suita, Toshiyuki Oishi, Yuji Abe et al.
The channel layer substitution of a wider bandgap AlGaN for a conventional GaN in high electron mobility transistors (HEMTs) is an effective method of enhancing the breakdown voltage. We demonstrated a remarkable breakdown voltage enhancement in these AlGaN channel HEMTs. The obtained maximum breakd ... [Appl. Phys. Lett. 92, 263502 (2008)] published Mon Jun 30, 2008.