Ga-substitution-induced single ferroelectric phase in multiferroic CuFeO[sub 2]
N. Terada, T. Nakajima, S. Mitsuda, H. Kitazawa, K. Kaneko et al.
We have succeeded in realizing a single ferroelectric phase in CuFeGaO by substituting nonmagnetic Ga for Fe sites in CuFeO. Ferroelectric polarization P in CuFeGaO is observed below 7.5 K, and has the relatively large value of ~250 [mu]C/m, which is comparable to P=300~400 [mu]C/m in the magnetic ... [Phys. Rev. B 78, 014101 (2008)] published Thu Jul 3, 2008.
Optical property and electronic band structure of a piezoelectric compound Ga[sub 3]PO[sub 7] studied by the first-principles calculation
Z. X. Cheng and X. L. Wang
The structure, electronic, and optical properties of a piezoelectric material, GaPO, were studied by first-principles calculations in the framework of density functional theory. The calculated structure is in agreement with the experimental data. Band structure reveals that GaPO has a band gap of 3. ... [Appl. Phys. Lett. 92, 261915 (2008)] published Thu Jul 3, 2008.
Large electrostrain near the phase transition temperature of (Bi[sub 0.5]Na[sub 0.5])TiO[sub 3]--SrTiO[sub 3] ferroelectric ceramics
Yuji Hiruma, Yoshitaka Imai, Yoshinori Watanabe, Hajime Nagata, and Tadashi Takenaka
(1-x)(BiNa)TiOxSrTiO (abbreviated as BNST100x) was prepared by a conventional ceramic fabrication process. The depolarization temperature T, rhombohedral-tetragonal phase transition temperature T, and the temperature T of the maximum dielectric constant were determined from the temperature dependenc ... [Appl. Phys. Lett. 92, 262904 (2008)] published Thu Jul 3, 2008.
Pressure-Induced Phase Transition in PbSc[sub 0.5]Ta[sub 0.5]O[sub 3] as a Model Pb-Based Perovksite-Type Relaxor Ferroelectric
B. Mihailova, R. J. Angel, A.-M. Welsch, J. Zhao, J. Engel et al.
We report pressure-induced structural changes in PbScTaO studied by single-crystal x-ray diffraction and Raman scattering. The appearance of a soft mode, a change in the volume compressibility, broadening of the diffraction peaks, and suppression of the x-ray diffuse scattering show that a phase tra ... [Phys. Rev. Lett. 101, 017602 (2008)] published Thu Jul 3, 2008.
Structure and relaxor behavior of BaTiO[sub 3]--CaTiO[sub 3]--SrTiO[sub 3] ternary system ceramics
Lingling Zhang, Xusheng Wang, Wei Yang, Hong Liu, and Xi Yao
This study prepared (1x)BaTiOxCaTiO (x=01) (denoted as BCT), (0.95x)BaTiOxCaTiO0.05SrTiO (x=0.000.95) (denoted as BS5CT), and (0.90x)BaTiOxCaTiO0.10SrTiO (x=0.000.90) (denoted as BS10CT) ceramics. Their preparation and structural and dielectric properties were characterized. The results show that ... [J. Appl. Phys. 104, 014104 (2008)] published Thu Jul 3, 2008.
Optical characterization of erbium doped LiNbO[sub 3] poling properties
M. Paturzo, S. Grilli, P. Ferraro, A. Finizio, P. De Natale et al.
We investigate the characteristics of the poling process of two samples of Er:LiNbO grown by the Chzocralski technique by comparing their optical properties. The first has a multidomain structure and shows some optical inhomogeneities probably due to lattice defects; the second, poled at the high te ... [J. Appl. Phys. 104, 014103 (2008)] published Thu Jul 3, 2008.
Deposition of aluminum oxide layer on GaN using diethyl aluminum ethoxide as a precursor
Tsutomu Uesugi, Tetsu Kachi, Masahiro Sugimoto, Tetsuya Matsuyama, Chihoko Mizue et al.
We performed a feasibility study on the deposition of aluminum oxides (AlO) on GaN using diethyl aluminum ethoxide [(CH)AlOCH] as a precursor by electron-cyclotron-resonance-assisted chemical vapor deposition. We determined the refractive index and permittivity of the deposited AlO layer to be 1.59 ... [J. Appl. Phys. 104, 016103 (2008)] published Wed Jul 2, 2008.
Enhanced piezoelectric properties of grain-oriented Bi[sub 4]Ti[sub 3]O[sub 12]--BaBi[sub 4]Ti[sub 4]O[sub 15] ceramics obtained by magnetic-field-assisted electrophoretic deposition method
Muneyasu Suzuki, Masaru Miyayama, Yuji Noguchi, and Tetsuo Uchikoshi
We report novel grain-orientation technology, magnetic-field-assisted electrophoretic deposition (B-assisted EPD), for synthesizing bismuth layerstructured ferroelectric ceramics. Grain-oriented BiTiOBaBiTiO ceramics obtained by the B-assisted EPD is shown to exhibit enhanced polarization and piezoe ... [J. Appl. Phys. 104, 014102 (2008)] published Wed Jul 2, 2008.
Ferroelectric properties of Pb(Mn[sub 1/3]Nb[sub 2/3])O[sub 3] - Pb(Zr,Ti)O[sub 3] thin films epitaxially grown on (001)MgO substrates
Tao Zhang, Kiyotaka Wasa, Isaku Kanno, and Shu-Yi Zhang
Ferroelectric ternary perovskite thin films of 0.06Pb(Mn,Nb)O (PMnN)0.42PbZrO (PZ)0.52PbTiO (PT) [0.06PMnN0.94PZT(45/55)] have been grown on the (001)MgO substrates by radio frequency-magnetron sputtering with quenching processing. The deposition conditions, microstructures, piezoelectric, and fe ... [J. Vac. Sci. Technol. A 26, 985 (2008)] published Tue Jul 1, 2008.
Microscopic mechanisms of spin-dependent electric polarization in 3d oxides
A. S. Moskvin and S.-L. Drechsler
We address a systematic microscopic theory of spin-dependent electric polarization in 3d oxides starting with a generic three-site two-hole cluster. A perturbation scheme realistic for 3d oxides is applied which implies the quenching of orbital moments by low-symmetry crystal field, strong intra-ato ... [Phys. Rev. B 78, 024102 (2008)] published Tue Jul 1, 2008.
Ferroelectric bimorph cantilever with self-assembled silane layer
Andriy Nadtochiy, T. Keith Hollis, and Igor Ostrovskii
Bimorph ferroelectric microcantilevers are fabricated at the locations of the interdomain walls of inversely poled lithium niobate. The cantilevers are excited via the piezoelectric effect using a rf voltage and the natural vibrations are observed via optical detection. The self-assembling layers of ... [Appl. Phys. Lett. 92, 263503 (2008)] published Tue Jul 1, 2008.
Room temperature ferromagnetism and ferroelectricity in cobalt-doped LiNbO[sub 3] film
C. Song, C. Z. Wang, Y. C. Yang, X. J. Liu, F. Zeng et al.
(5 at. %) cobalt-doped LiNbO (Co:LN) films were prepared by combinatorial laser molecular-beam epitaxy on Si (100). The Co:LN films with Co replacing Nb exhibit room temperature ferromagnetism of 1.2[mu]/Co and Curie temperature of ~540 K. Through a Ag/Co:LN/Si metal-ferroelectric-semiconductor f ... [Appl. Phys. Lett. 92, 262901 (2008)] published Tue Jul 1, 2008.
Platinum-coated probes sliding at up to 100 mm/s against lead zirconate titanate films for atomic force microscopy probe-based ferroelectric recording technology
Kwang Joo Kwak and Bharat Bhushan
With the advent of scanning probe microscopes, probe-based data recording technologies are being developed for ultrahigh areal density. In alternative ferroelectric data storage, a conductive atomic force microscope (AFM) tip is placed in contact on a lead zirconate titanate (PZT) layer as the ferro ... [J. Vac. Sci. Technol. A 26, 783 (2008)] published Mon Jun 30, 2008.
Silicate formation and thermal stability of ternary rare earth oxides as high-k dielectrics
S. Van Elshocht, C. Adelmann, T. Conard, A. Delabie, A. Franquet et al.
Hf-based dielectrics are currently being introduced into complementary metal oxide semiconductor transistors as replacement for SiON to limit gate leakage current densities. Alternative materials such as rare earth based dielectrics are of interest to obtain proper threshold voltages as well as to e ... [J. Vac. Sci. Technol. A 26, 724 (2008)] published Mon Jun 30, 2008.
Nanotribological and nanomechanical properties of lubricated PZT thin films for ferroelectric data storage applications
Manuel Palacio and Bharat Bhushan
Lead zirconate titanate (PZT) is a desirable material for nonvolatile data storage due to its ferroelectric properties. Evaluating the nanoscale mechanical and tribological performance of PZT is crucial in understanding the reliability of this material. To this end, the mechanical properties of the ... [J. Vac. Sci. Technol. A 26, 768 (2008)] published Mon Jun 30, 2008.